High throughput & Superior cutting quality
- Reduced process lead time and kerf loss
- Enhanced flatness of cut materials and superior warp, TTV and Bow values
• Applicable for thin wafer slicing – Through uniform diamond grit
• Longer wire lifetime – Excellent diamond retention & no wire breakage
• Faster cutting speed – 3~10 times compared with slurry process
• Low cost and eco-friendly – Slurry free process
• EHWA & MWEDC
• Wafer surface roughness and die strength can be improved
• Grinding stress and wafer edge chipping can be reduced
• Diamond at the tip can be distributed consistently
• Porosity, pore shape and pore size control can be adjusted
• Possible to grind Si wafer up to 17㎛ (Ultra thin wafer)
• Outstanding grinding ability for TSV and normal(for finger print) compound wafer
• Applying dry polishing after processing wafer with back grinding wheel.
• Mirror surface processing by using soft wool felt and ZrO2 250mm for improving
roughness.
• High precision thin with superior cutting efficiency
• Maintains free cutting action at high RPM and fast feed rates
• Eliminate chipping during the sawing operation
• Strong diamond holding force : Chemical reaction + Mechanical contact
• Corrosion resistance : Carbide interface between diamond & bond material
• Longer lifetime : Utilization of edges by diamond face
• Maximized diamond chip pocket by high diamond exposure
→ Excellent conditioning efficiency and pad debris removal rate
• Various groove shapes can be designed.
• Grinded with uniform chamfer width (excellent rigidity)
• Strong groove shape retention.
• Product 1ea enables multi-stage grinding (rough / fine grinding)
• For front end application, solar, LED and glass
• Various groove shapes can be designed.
• Grinded with uniform chamfer width (excellent rigidity)
• Strong groove shape retention.
• Product 1ea enables multi-stage grinding (rough / fine grinding)